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 (R)
ST13007FP
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s s
s s s
HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 oC LARGE RBSOA
3 1 2
APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds.
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at T c 25 C Storage Temperature Max. O perating Junction Temperature
o
Value 700 400 9 8 16 4 8 36 -65 to 150 150
Uni t V V V A A A A W
o o
C C
June 1998
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ST13007FP
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 3.47
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEV V CE = rated V CEV V EB = 9 V I C = 10 mA IC IC IC IC = = = = 2 5 8 5 A A A A IB IB IB IB = = = = 0.4 A 1A 2A 1A 400 1 2 3 3 1.2 1.6 1.5 15 26 5 1.6 60 2.3 110 28 40 30 2.5 110 ms ns s ns T c = 100 C
o
Min.
Typ .
Max. 1 5 1
Un it mA mA mA V V V V V V V V
V CEO(sus ) Collector-Emitter Sustaining Voltage V CE(sat ) Collector-Emitter Saturation Voltage
Tc = 100 oC
V BE(s at)
Base-Emitter Saturation Voltage DC Current G ain
IC = 2 A IC = 5 A IC = 5 A IC = 2 A Group A Group B IC = 5 A IC = 5 A I B1 = 1 A L = 200 H IC = 5 A I B1 = 1 A L = 200 H
IB = 0.4 A IB = 1 A IB = 1 A V CE = 5 V
Tc = 100 C
o
h FE
V CE = 5 V V CL = 250 V IB2 = -2 A V CL = 250 V IB2 = -2 A o T c = 125 C
ts tf ts
tf
INDUCTIVE LOAD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime
* Pulsed: Pulse duration = 300 s, duty cycle 2 % Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
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ST13007FP
Safe Operating Areas Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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Inductive Fall Time Inductive Storage Time
Reverse Biased SOA
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TO-220FP MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7 F1 F
D
G1
E
H
F2
123 L2 L4
G
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ST13007FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .
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